Inkjet-printed organic photodiodes are reported, which eliminate the need for photodiode patterning as compared to other solution-based fabrication techniques. Both interlayer and bulk heterojunction ink formulations are optimized to fabricate diodes with low dark currents of 2 mu A/cm(2) and high external quantum efficiencies of 68.5% at 5 V reverse bias. The current-voltage characteristics of the printed devices are competitive with photodiodes fabricated with established solution based technologies, such as spray-coating or blading. A comparison of photodiodes fabricated with a variety of solution processes showed that dark current densities are not related to microscale bulk heterojunction roughness. (C) 2011 Elsevier B.V. All rights reserved.