Manganese-activated willemite (alpha-Zn(2-x)Mn(x)SiO(4); x = 0.05-0.20) phosphor thin films with bright green light emission were deposited on silicon wafers by a sol-gel process. Zinc chloride, tetraethylorthosilicate, and manganese chloride were employed as precursors. The sol-gel transition, crystallization process and photoluminescence of processed films were investigated. The level of manganese doping did not greatly affect the crystallinity, but did affect the gelation rate and luminescence of films. X-ray diffraction and infrared spectrum studies revealed that single-phase willemite started to crystallize at around 600 degrees C. After thermal annealing at 600 degrees-1200 degrees C, the crystallinity of films increased with increasing heating temperature and thickness of films. The emission intensity of the film was strongly related to the crystallinity and deposition conditions. Controlling the dopant content, number of coating layers and annealing temperature could significantly enhance the brightness of the green emission. The luminescence properties of alpha-Zn(2)SiO(4):Mn films are characterized by fluorescence spectra and decay lifetime measurements. (C) 2011 Elsevier B.V. All rights reserved.