We report the deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition (APCVD) using a previously unreported precursor combination; dimethylindium acetylacetonate, [Me2In(acac)] and trifluoroacetic acid (TFA). This process is potentially scalable for high throughput, large area production. [Me2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Cubic fluorine doped indium oxide (F.In2O3) was deposited at a substrate temperature of 550 degrees C with growth rates exceeding 8 nm/s. Resistivity was 8x10(-4) Omega cm and transmission for a 200 nm film was >80% with less than 1% haze. (C) 2011 Elsevier B. V. All rights reserved.