Thin Solid Films, Vol.520, No.6, 1847-1850, 2012
Preparation of LaRuO3 films by microwave plasma-enhanced chemical vapor deposition
LaRuO3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R-La/Ru) and microwave power (P-M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R-La/Ru<1.0, RuO2 films were obtained independent of P-M. At R-La/Ru = 1.6-3.2 and P-M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO3 single phase films were prepared. A product mixture of La2RuO5 and (beta-La3RuO7 was obtained at R-La/Ru =4 and P-M = 1.2 kW, while a mixture of RuO2 and La4.87Ru2O12 was formed at R-La/Ru = 4.6 and P-M = 0.6 kW. LaRuO3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 x 10(4) S m(-1) at room temperature. (C) 2011 Elsevier B.V. All rights reserved.
Keywords:Plasma-enhanced chemical vapor deposition;Lanthanum ruthenate;Thin films;Microstructure;Electrical conductivity