Differential Scanning Calorimetry (DSC) was used to study the effect of Al incorporation on the crystallization of beta-FeSi2 film on SiO2/Si(100) substrate. An exothermic reaction pertaining to the crystallization of beta-FeSi2, confirmed using X-Ray Diffraction, can be observed by heating a 1.2 mu m amorphous FeSi2 film in the DSC. Using Kissinger analysis, the activation energy of thin beta-FeSi2 crystallization was determined to be 2.63 +/- 0.05 eV. In this study, it was found that the activation energy for beta-FeSi2 crystallization increases with Al incorporation by co-sputtering. Hall measurements show the Al incorporated beta-FeSi2 to be P-type. (C) 2011 Elsevier B.V. All rights reserved.