Among an extremely large number of possible fullerene applications in the field of electronics, optics and photo-voltaics, C-60-cages are also considered as a promising dopant for low dielectric constant (low-k) materials. In this study, we incorporated C-60 species into a 3-aminopropyltrimethoxysilane (APTMS) based material. We prepared thin films by spin coating. Using X-ray photoelectron spectroscopy we analyzed the time-related interactions between the components of the prepared samples and the influence of the C-60 replacement by its better soluble derivative [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM) on the chemical properties of the material. We applied atomic force microscopy to investigate the surface texture and thicknesses of the obtained films. In order to obtain information concerning the electrical properties of the material we performed capacitance-voltage characterization. We have proven that the increase of C-60 species realized by PCBM incorporation within the APTMS-based matrix reduces the dielectric constant of the examined films while preserving its homogeneity. (C) 2011 Elsevier B.V. All rights reserved.