Thin Solid Films, Vol.520, No.7, 3009-3012, 2012
Complementary ring oscillator fabricated via direct laser-exposure and solution-processing of a single-layer organic film
A complementary ring oscillator is realized by exposing a solution-processed single-layer organic film to area-selective laser-light exposure and solution development. The pristine film comprises a blend of two organic semiconductors: p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) and n-type [6,6]-phenyl C-61 butyric acid methyl ester (PCBM). The exposure transforms PCBM into an insoluble form, and the subsequent development selectively removes the non-exposed PCBM while leaving exposed PCBM and P3HT intact. The 5-step ring oscillator exhibits a frequency of 10 mHz, a power delay product of 2.0 mu J, and an energy delay product of 22 mu Js. Opportunities for performance improvements of the scalable fabrication technique are highlighted in an accompanying analysis. (C) 2011 Elsevier B.V. All rights reserved.
Keywords:CMOS;Ring-oscillator;Inverter;Organic thin-film transistor;Patterning;Energy delay product;P3HT;PCBM