Gas phase particle formation and elimination in silicon epitaxial layers grown on Si (100) substrates using reduced pressure chemical vapor deposition at low temperatures (<600 degrees C) are investigated. High-order silane precursors (SinH2n+2; n=3, n>3) are useful for high growth rate epitaxy at low temperature. However, particulates are observed on the surface of the epitaxial layers grownwith high-order silanes. These particulates are attributed to gas phase particles. As atomically smooth epitaxial films are desired, the elimination of gas phase particles is required. Cyclical deposition and etch process and/or lowpressure deposition enables atomically smooth SiCP epitaxial films with a high-order silane. (C) 2011 Elsevier B.V. All rights reserved.