Binary and ternary Si/Ge/Sn alloys were epitaxially grown on virtual Germanium buffer layers using pulsed laser induced epitaxy with a 193 nm Excimer laser source. The role of the processing parameters on the intermixing of the components (Sn, Ge and Si) has been studied. Characterization of the resulting Ge1-xSnx and Si1-y-xGeySnx alloys yield up to 1% Sn concentration in substitutional sites of the Ge or SiGe matrix. (C) 2011 Elsevier B. V. All rights reserved.