Both compressive strain (epsilon(c)) and hole mobility (mu(h)) were investigated for SiGe-on-insulator substrates with different values for the SiGe layer thickness (d) and Ge fraction (Ge%), which were fabricated by Ge condensation. We found that the epsilon(c) introduced during Ge condensation was strongly dependent on d and Ge%. Thinner d is helpful for maintaining higher epsilon(c) when Ge% is 50%. epsilon(c) is dramatically relaxed with a further increase in Ge%. By varying the tradeoff between Ge% and epsilon(c), we achieved a maximum mu(h) of approximately 570 cm(2)/V.s in the d range of 9-11 nm and Ge% range of 50-65%. (C) 2011 Elsevier B. V. All rights reserved.