We established fabrication methods for high-quality Ge n(+)/p and p(+)/n junctions using thermal diffusion of P and implantation of B, respectively. The carrier concentrations in n(+) and p(+) layers were as high as 4 x 10(19) and 2 x 10(19) cm(-3), respectively. It was found that a peripheral surface-state current dominates the reverse leakage current in an n(+)/p junction diode. The protection of junction surfaces from plasma damage during the SiO2 deposition was essential to achieve high-quality source/drain junctions. The surface passivation with a GeO2 interlayer was harmful to an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) because of an increase in a surface leakage current due to inversion carriers. For a p-channel MOSFET, on the other hand, the GeO2 interlayer plays a role in decreasing the surface leakage current. (c) 2011 Elsevier B.V. All rights reserved.