Various SiGe-based Quantum Dot Superlattices (QDSLs) were grown using an industrial Chemical Vapor Deposition tool with the intent to develop efficient thermoelectric thin films at a large scale. We report first on the growth of monocrystalline SiGe-based QDSLs. We were able to control the SiGe spacer width and the sizes and densities of Ge dots. A vertical ordering behavior was observed for large dot structures, but not for those with the smallest dots (30-70 nm wide, 3 nm high). In situ B doping operated during growth led to hole densities of 5 x 10(19) to 1 x 10(20) cm(-3). We also report on the growth of polycrystalline SiGe-based QDSLs with the same equipment. We show in particular that vertically aligned Ge dots were formed in a similar way as in monocrystalline structures despite the presence of stacking faults and grain boundaries. A kheavy p doping was also obtained on some of these structures. (C) 2012 Elsevier B.V. All rights reserved.