Atomic Vapor Deposition and Atomic Layer Deposition techniques were applied for the depositions of Ta2O5, Ti-Ta-O, Sr-Ta-O and Nb-Ta-O oxide films for Metal-Insulator-Metal (MIM) capacitors used in back-end of line for Radio Frequency applications. Structural and electrical properties were studied. Films, deposited on the TIN bottom electrodes, in the temperature range of 225-400 degrees C, were amorphous, whereas the post deposition annealing at 600 degrees C resulted in the crystallization of Nb-Ta-O films. Electrical properties of MIM structures, investigated after sputtering Au top electrodes, revealed that the main characteristics were different for each oxide. On one hand, Ti-Ta-O based MIM capacitors possessed the highest dielectric constant (50), but the leakages currents were also the highest (similar to 10(-5) A/cm(2) at -2 V). On the other hand. Sr-Ta-O showed the lowest leakage current densities (similar to 10(-9) A/cm(2) at -2 V) as well as the smallest capacitance-voltage nonlinearity coefficients (40 ppm/V-2), but the dielectric constant was the smallest (20). The highest nonlinearity coefficients (290 ppm/V-2) were observed for Nb-Ta-O based MIM capacitors, although relatively high dielectric constant (40) and low leakage currents (similar to 10(-7) A/cm(2) at -2 V) were measured. Temperature dependent leakage-voltage measurements revealed that only Sr-Ta-O showed no dependence of leakage current as a function of the measurement temperature. (C) 2011 Elsevier B.V. All rights reserved.