Effect of the nanostructure on room temperature ferromagnetism and resistivity of undoped ZnO thin films grown by chemical vapor deposition

Burova LI; Perov NS; Semisalova AS; Kulbachinskii VA; Kytin VG; Roddatis VV; Vasiliev AL; Kaul AR

Thin Solid Films, Vol.520, No.14, 4580-4585, 2012

DOI10.1016/j.tsf.2011.10.198 Export Citation

Effect of the nanostructure on room temperature ferromagnetism and resistivity of undoped ZnO thin films grown by chemical vapor deposition

Burova LI, Perov NS, Semisalova AS, Kulbachinskii VA, Kytin VG, Roddatis VV, Vasiliev AL, Kaul AR

Undoped zinc oxide thin films having various types of morphology and nanostructure were deposited by metal organic chemical vapor deposition (MOCVD) on single-crystalline substrates. Water-assisted MOCVD process at low temperatures (300-500 degrees C) was applied along with conventional MOCVD in oxygen-containing atmosphere at 500 and 600 degrees C. The strong correlation between room-temperature ferromagnetism of the films, their electrical properties and morphology at nano-scale was demonstrated. (C) 2011 Elsevier B.V. All rights reserved.

Keywords:Undoped ZnO;Nanostructure;Thin films;Room-temperature ferromagnetism;Water-assisted MOCVD;Epitaxial variant structure