Thin Solid Films, Vol.520, No.15, 4880-4883, 2012
Orientation control of epitaxial Ge thin films growth on SrTiO3 (100) by ultrahigh vacuum sputtering
We report the orientation control of crystalline Ge (111) and Ge (001) growth on SrTiO3 (100) substrate by adjusting the temperature of substrate. It is found that the substrate temperature plays an important role for the formation of crystalline Ge with different surface orientations and interfacial chemical configuration during the sputtering process. At 500 degrees C. Ge (111) with good crystalline quality is formed, while Ge (001) is preferably grown on SrTiO3 substrate at 650 degrees C. Our results show the possibility of manipulating the surface orientations during Ge growth on SrTiO3 by controlling the substrate temperatures. (c) 2012 Elsevier B.V. All rights reserved.
Keywords:Ge/SrTiO3;Epitaxy;X-ray diffraction;Transmission electron microscopy;X-ray photoemission spectroscopy