The B-N codoped p-type ZnO thin films have been prepared by radio frequency magnetron sputtering using a mixture of nitrogen and oxygen as sputtering gas. The effect of annealing temperature on the structural, electrical and optical properties of B-N codoped films was investigated by using X-ray diffraction, Hall-effect, photoluminescence and optical transmission measurements. Results indicated that the electrical properties of the films were extremely sensitive to the annealing temperature and the conduction type could be changed dramatically from n-type to p-type, and finally changed to weak p-type in a range from 600 degrees C to 800 degrees C. The B-N codoped p-type ZnO film with good structural, electrical and optical properties can be obtained at an intermediate annealing temperature region (e. g., 650 degrees C). The codoped p-type ZnO had the lowest resistivity of 2.3 Omega cm, Hall mobility of 11 cm(2)/Vs and carrier concentration of 1.2x10(17) cm(-3). (C) 2012 Elsevier B.V. All rights reserved.