100 nm thick 8-AlQ(3) films deposited onto silicon wafers have been encapsulated by mean of low temperature atomic layer deposition of Al2O3 (20 nm). Investigation of the film evolution under storage test as harsh as 65 degrees C/85% RH has been investigated up to similar to 1000 h and no severe degradation could be noticed. The results have been compared to raw AlQ(3) films which deteriorate far faster in the same conditions. For that purpose, fluorescence measurements and atomic force microscopy have been used to monitor the film evolution while transmission electron microscopy has been used to image the interface between AlQ(3) and Al2O3. This concept of bilayer AlQ(3)/Al2O3 barrier films has finally been tested as an encapsulation barrier onto an organic light-emitting diode. (C) 2012 Elsevier B.V. All rights reserved.