Heteroepitaxial Ir films on Si(001) with a double ceria/yttria stabilized zirconia heteroepitaxial buffer layer were grown by magnetron sputtering. As-deposited CeO2 films covered with {111} faceted pyramids resulted in iridium films with the [001] axis normal to the substrate plane. The buffered substrates annealed at 1115 degrees C have a smooth surface; Ir films on such substrates have the (111) orientation and consist of grains turned at 90 degrees toward each other. (C) 2012 Elsevier B.V. All rights reserved.