The formation of poly-crystalline silicon-germanium films on single-crystalline silicon substrates by the method of aluminum-induced crystallization was investigated. The aluminum and germanium films were evaporated onto the single-crystalline silicon substrate to form an amorphous-germanium/aluminum/single-crystalline silicon structure that was annealed at 450 degrees C-550 degrees C for 0-3 h. The structural properties of the films were examined using x-ray diffraction, Raman spectroscopy and Auger electron spectroscopy. The x-ray diffraction patterns confirmed that the initial transition from an amorphous to a poly-crystalline structure occurs after 20 min of aluminum-induced crystallization annealing process at 450 degrees C. The micro-Raman spectral analysis showed that the aluminum-induced crystallization process yields a better poly-crystalline SiGe film when the film is annealed at 450 degrees C for 40 min. The growth mechanism of the poly-crystalline silicon-germanium by aluminum-induced crystallization was also studied and is discussed. (C) 2012 Elsevier B.V. All rights reserved.