Current Applied Physics, Vol.13, No.2, 386-389, 2013
Multiferroic characteristics of the strained epitaxial Bi0.9Ho0.1FeO3 thin film
We fabricated high quality epitaxial Bi0.9Ho0.1FeO3 thin films which exhibited the tetragonally stained structure with a c/a ratio of about 1.04. The Bi0.9Ho0.1FeO3 thin film showed a good ferroelectric property with the high remanent polarization (P-r) of about 80 mu C/cm(2). The ferromagnetic hysteresis loop with a clear remanent magnetization was shown. The coercive field and the remanent magnetization of the Bi0.9Ho0.1FeO3 film are 6200 Oe and 1.7 emu/g, respectively. The abrupt conduction due to space charge limited (SCL) was revealed in leakage current density versus electric field. (C) 2012 Elsevier B.V. All rights reserved.