Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect

Zhou YS; Hinchet R; Yang Y; Ardila G; Songmuang R; Zhang F; Zhang Y; Han WH; Pradel K; Montes L; Mouis M; Wang ZL

Advanced Materials, Vol.25, No.6, 883-888, 2013

DOI10.1002/adma.201203263 Export Citation

Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect

Zhou YS, Hinchet R, Yang Y, Ardila G, Songmuang R, Zhang F, Zhang Y, Han WH, Pradel K, Montes L, Mouis M, Wang ZL

Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 +/- 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano-Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro-/nanosensor arrays or artificial skin.

Keywords:GaN;nanowires;force sensors;piezotronic materials