화학증착법에 의한 고온 초전도 Y-Ba-Cu-O 박막의 제조 조건 확립에 관한 연구

박정식; 조익준; 김춘영; 이희균; 원동연; 신형식

Journal of the Korean Industrial and Engineering Chemistry, Vol.3, No.3, 412-421, September, 1992

Export Citation

화학증착법에 의한 고온 초전도 Y-Ba-Cu-O 박막의 제조 조건 확립에 관한 연구

Establishment of Preparation Conditions for High-Tc Superconducting Y-Ba-Cu-O Thin Film by Chemical Vapor Deposition

박정식, 조익준, 김춘영, 이희균, 원동연, 신형식

초록

단결정 기판위에 증착된 고온 초전도 박막은 microelectronic 장치의 실제적인 응용을 위한 가능성을 보여주고 있다. 고온 초전도 Y-Ba-Cu-O 박막을 원료물질로서 Y(thd)₃, Ba(thd)₂와 Cu(thd)₂의 유기금속 킬레이트를 사용하였고 단결정 MgO(100), YSZ(100), SrTiO₃(100)와 다결정 SrTiO₃ 기판에 화학증착법을 통해 제조하였다. 박막의 증착두께는 증착시간이 증가함에 따라 선형적으로 증가하였다. 단결정 MgO(100), YSZ(100), SrTiO3(100) 기판 위에 증착한 Y-Ba-Cu-O 박막은 액체질소 비등온도(T_C,onset=87∼89K, T_C,zero=85∼86K) 이상에서 초전도성을 나타내었으나 다결정 SrTiO3 기판은 액체질소 비등온도 이상에서 제로저항을 갖지 않았다.

The superconducting thin films have shown a growing possibility for practical application in microelectronic fields in recent years. In this study, the high Tc superconducting Y-Ba-Cu-O thin films were prepared on various substrates by chemical vapor deposition method using organic metal chelates of Y(thd)₃, Ba(thd) ₂, and Cu(thd)₂ as source materials. The deposition reactions were carried out on single crystalline MgO(100), YSZ(100), SrTiO₃(100), and polycrystalline SrTiO₃ substrates. Deposition thickness of thin films was linearly increased with the increase of deposition time. It turned out that the Y-Ba-Cu-O thin films on MgO(100), YSZ(100), and SrTiO₃(100) single crystal substrates showed superconductivities above liquid nitrogen temperature(T_c,zero=87∼89K, T_c,zero=85∼86K), but the one on poly crystalline SrTiO₃ substrate did not.

[References]

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[1] Bednorz JG, Muller KA, Z. Phys., B64, 189 (1986)

[2] Chu CW, Hor PH, Meng RL, Gao L, Huang ZJ, Wang YZ, Phys. Rev. Lett., 58, 405 (1987)

[3] Hor PH, Gao L, Meng RL, Huang ZJ, Wang YQ, Forster K, Vassilious J, Chu CW, Wu MK, Ashburn JR, Jorng CJ, Phys. Rev. Lett., 58, 911 (1987)

[4] Maeda H, Tanaka Y, Fukutomi M, Asano T, Jpn. J. Appl. Phys., 27, L209 (1988)

[5] Sheng ZZ, Herman AM, El-Ali A, Almasan C, Estrada J, Datta T, Matson RJ, Phys. Rev. Lett., 60, 937 (1988)

[6] Weiner-Avnear E, Kerber GL, McFall JE, Spargo JW, Toth AG, Appl. Phys. Lett., 56, 1802 (1990)

[7] Chang CA, Tsuei CC, Chi CC, McGuire TR, Appl. Phys. Lett., 52, 72 (1988)

[8] Ginley DS, Kwak JF, Hellmer RP, Baughman RJ, Venturini EL, Morosin B, Appl. Phys. Lett., 53, 406 (1988)

[9] Hong M, Liou SH, Kwo J, Davidson BA, Appl. Phys. Lett., 51, 694 (1987)

[10] Adachi H, Setsune K, Mitsuru T, Hirochi K, Ichikawa Y, Kamada T, Wasa K, Jpn. J. Appl. Phys., 26, L709 (1987)

[11] Harker AB, Kobrin PH, Morgan PDE, DeNatale JF, Ratto JJ, Gergis IS, Howitt DG, Appl. Phys. Lett., 52, 2186 (1988)

[12] Kwo K, Hsieh JC, Felmeng RM, Hong M, Liou SH, Davidson BA, Feldman LC, Phys. Rev., B, Condens. Matter, 36, 4039 (1987)

[13] Bai GR, Tao W, Wang R, Xie LM, Zhang XK, Huang J, Qian CT, Zhou WK, Ye CQ, Ren JG, Li YQ, Luo WM, Chen JB, Appl. Phys. Lett., 55, 194 (1989)

[14] Zhao J, Noh DW, Chern C, Li YQ, Norris P, Gallois B, Appl. Phys. Lett., 56, 2342 (1990)

[15] Chopra KL, Kaur I, "Thin Film Device Applications," Pelnum Press, New York, 25 (1983)

[16] Hocking MG, Vasantasree V, Sidky PS, "Metallic and Ceramic Coatings: Production, High Temperature Properties & Applications," John Wiley, New York, 159 (1989)

[17] Sladek KJ, J. Electrochem. Soc., 118, 654 (1971)

[18] Scott BA, Olbricht WL, Meyerson BA, Reimer JA, Wolford DJ, J. Vac. Sci. Technol. A, 2, 450 (1984)

[19] Shaw DW, "Crystal Crowth," Plenum Press, London, Ch. 1 (1974)

[20] Lee HG, Park JS, Shin HS, Kim CY, Kim CJ, Won DY, Jpn. J. Appl. Phys., 30, L1977 (1991)

[21] Berg EW, Chiang JJ, Anal. Chim. Acta, 40, 101 (1968)

[22] Berg EW, Herrera NM, Anal. Chim. Acta, 60, 117 (1972)

[23] Bryant WA, J. Mater. Sci., 12, 1285 (1977)