A novel photo-acid generator (PAG) bound molecular glass photoresist with a single protecting group has been developed as a promising resist material for use in microelectronics. This single component molecular resist was prepared in four steps starting from 9,9-bis(4-hydroxyphenyl)fluorene. The single component molecular resist exhibited good thermal properties, such as a 10% weight loss temperature of 200 degrees C and a glass transition temperature of 91 degrees C. This resist showed a good sensitivity of 60 C/cm2 with e-beam exposure (50 keV). On the other hand, the fine pattern with a half-pitch of 50 nm in the presence of 4 wt % quencher, trioctylamine, was obtained using electron-beam (100 keV) lithography. The LER value was 8.2 nm (3 sigma, 60 nm half-pitch patterns). (c) 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013, 51, 1956-1962