We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material. The on- and off-state drain currents differ by several orders of magnitude, and have a long retention time, a high programming cycle endurance and short programming time. The remanent semiconductor surface charge density in the on- state has a high value of 18 mC m(-2), which explains the large on/off ratio. Application of a moderate gate field raises the surface charge to 26 mC m(-2), which is of a magnitude that is very difficult to obtain with conventional FETs because they are limited by dielectric breakdown of the gate insulator. In this way, the present ferroelectric-semiconductor interface extends the attainable field-effect band bending in organic semiconductors.