An attempt has been made to fabricate p-ZnO thin films from the ZrN mixed ZnO targets by RF magnetron sputtering. The targets of different ZrN concentrations (0, 1, 2, and 4mol%) have been prepared by solid-state reaction route. The ZrN-codoped ZnO films grown on semi-insulating Si (100) substrates have been characterized by X-ray diffraction (XRD), photoluminescence (PL), Hall effect measurement, time-of-flight secondary ion mass spectrometer (ToF-SIMS), and atomic force microscopy (AFM). XRD studies reveal that all films are oriented along (002) plane. The Hall measurements showed p-conductivity for 1 and 2mol% ZrN-codoped ZnO films. Further, it has been found that 1mol% ZrN-codoped film has low resistivity (7.5x10(-2)cm) and considerable hole concentration (8.2x10(18)cm(-3)) by optimum incorporation of nitrogen due to best codoping. The red shift in near-band-edge emission observed from PL well acknowledged the p-conduction in 1 and 2mol% ZrN-codoped ZnO film. The incorporation of N and Zr atoms in the ZnO matrix has been confirmed by ToF-SIMS analysis. The increase in peak to valley roughness (R-pv) with increase of doping concentration has been observed from AFM analysis. ZnO homojunction has also been fabricated with the best codoped p-ZnO film and it showed typical rectification behavior of a diode. The junction parameters have also been determined for the fabricated homojunction.