In this paper, we study the electrochemical anodization of n-type heavily doped 4H-SiC wafers in HF based electrolytes without any UV light assistance. We present, in particular, the differences observed when varying the process conditions such as the HF concentration, the type of additive and the applied current regime. The use of a solvent such as acetic acid seems to be more suitable to produce homogeneous morphologies compared with Cetyltrimethylammonium chloride (CTAC), Ammonium dodecylsulfate (ADS), Triton X-100 surfactants. In addition, the use of pulsed current regimes improves the global homogeneity of the porous layers. Nevertheless, for some unexplained reasons, at specific concentrations of 15 and 50%, this homogeneity cannot be ensured and the observed morphology mixes mesopores and macropores with random orientations. (C) 2013 The Electrochemical Society. All rights reserved.