화학공학소재연구정보센터
Nature Nanotechnology, Vol.6, No.12, 793-797, 2011
Positive and negative Coulomb drag in vertically integrated one-dimensional quantum wires
Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or use reduced-dimensional conductors(1) such as carbon nanotubes(2-6), nanowires(7-10) and gated high-mobility two-dimensional electron systems(11-13). This is because the screening of the long-range Coulomb potential of individual carriers is weakened in these systems, which can lead to phenomena such as Coulomb drag, where a current in one wire induces a voltage in a second wire through Coulomb interactions alone. Previous experiments have demonstrated Coulomb electron drag in wires separated by a soft electrostatic barrier of width greater than or similar to 80 nm (ref. 12), which was interpreted as resulting entirely from momentum transfer. Here, we measure both positive and negative drag between adjacent vertical quantum wires that are separated by similar to 15 nm and have independent contacts, which allows their electron densities to be tuned independently. We map out the drag signal versus the number of electron sub-bands occupied in each wire, and interpret the results both in terms of momentum-transfer and charge-fluctuation induced transport models. For wires of significantly different sub-band occupancies, the positive drag effect can be as large as 25%.