Effects of cobalt and cobalt oxide buffer layers on nucleation and growth of hot filament chemical vapor deposition diamond films on silicon (100)

Mushtaq Ahmad Dar; Hatem Abuhimd; Iftikhar Ahmad; Mohammad Islam; Mohammad Rezaul Karim; Hyung-Shik Shin

Korean Journal of Chemical Engineering, Vol.31, No.7, 1271-1275, July, 2014

DOI10.1007/s11814-014-0093-4 Export Citation

Effects of cobalt and cobalt oxide buffer layers on nucleation and growth of hot filament chemical vapor deposition diamond films on silicon (100)

Mushtaq Ahmad Dar^{1, 2, †}, Hatem Abuhimd³, Iftikhar Ahmad¹, Mohammad Islam¹, Mohammad Rezaul Karim¹, and Hyung-Shik Shin²

¹Center of Excellence for Research in Engineering Materials (CEREM), Advanced Manufacturing Institute, King Saud University, Riyadh 11421 - P. O. Box 800, Kingdom of Saudi Arabia
²School of Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea
³National Nanotechnology Center, King Abdulaziz City for Science and Technology, Riyadh 11442, Saudi Arabia

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An initial study on the nucleation and growth of diamond, using hot filament chemical vapor deposition(HFCVD) technique, was carried out on Co and CoO thin buffer layers on non-carbon substrates (Si (100)), and the results were compared with conventional scratching method. The substrate temperature during the growth was maintained at 750±50 ℃. A mixture of CH4 and H2 (1 : 100 volume %) was used for deposition. The total pressure during the two hour deposition was 30±2 Torr. X-ray photoelectron spectroscopy (XPS) study showed the diamond nucleation at different time periods on the Co and CoO seed layers. It is observed that Co helps in nucleation of diamond even though it is known to degrade the quality of diamond film on W-C substrate. The reason for improvement in our study is attributed to (i) the low content of Co (~0.01%) compared to W-C substrate (~5-6%), (ii) formation of CoSi2 phase at elevated temperature, which might work as nucleation sites for diamond. SEM analysis reveals a change in the morphology of diamond film grown on cobalt oxide and a significant reduction in the size of densely packed crystallites. Raman spectroscopic analysis further suggests an improvement in the quality of the film grown on CoO buffer layer.

Keywords:Hot Filament Chemical Vapor Deposition (HFCVD);CVD Diamond;Cobalt;Cobalt Oxide;Filament-substrate Distance

[References]

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Toyota H, Nomura S, Takahashi Y, Mukasa S, Dia. Rel. Mater., 17, 1902 (2008)
Kamo M, Sato Y, Matsumoto S, Setaka N, J. Cryst. Growth, 62, 642 (1983)
Akaisuka F, Hirose Y, Komaki K, Jpn. J. Appl. Phys., 27, 1600 (1988)
Whitmell DS, Williamson R, Thin Sol. Films, 35, 255 (1976)
Mori T, Namba Y, J. Vac. Sci. Technol. A, 1, 23 (1983)
Buerki PR, Leutwyler S, J. Appl. Phys., 69, 3739 (1991)
Angus JC, Will HA, Stanko WS, J. Appl. Phys., 39, 2915 (1968)
Sung CM, Tai MF, Int. J. Refract. Met. Hard Mater., 15, 237 (1997)
Collins AT, Spear PM, J. Phys. D, 15, 183 (1982)
Mitsuda K, Kojima Y, Yoshida T, Akashi K, J. Mater. Sci., 22, 1557 (1987)
Yugo S, Kanai T, Kimura T, Muto T, Appl. Phy. Lett., 58, 1036 (1991)
Stoner BR, Ma GHM, Wolter SD, Glass JT, Phys. Rev. B, 45, 11067 (1992)
Ong TP, Xiong F, Chang RPH, White CW, J. Mater. Res., 7, 2429 (1992)
Ihra M, Komiyama H, Okubo T, Appl. Phys. Lett., 65, 1192 (1994)
Kobayashi K, Mutsukura N, Machi Y, Mater. Manuf. Processes, 7, 395 (1992)
Feng Z, Komvopopulos K, Brown IG, Bogy DB, J. Appl. Phys., 74, 2841 (1993)
Dar MA, Ansari SG, Ansari ZA, Umemoto H, Kim YS, Seo HK, Kim GS, Suh EK, Shin HS, Int. J. Refract. Met. Hard Mater., 24, 418 (2006)
Musale DV, Pai MP, Sainkar SR, Kshirsagar ST, Mater. Lett., 39, 86 (1999)
Yoshiwaka M, Kaneko Y, Yang CF, Tokura H, Kamo M, J. Japan. Soc. Precision Eng., 54, 1703 (1988)
Gicquel A, Silva F, Hassouni K, J. Electrochem. Soc., 147(6), 2218 (2000)
Dar MA, Ansari SG, Seo HK, Kim GS, Kim YS, Kulkarni SK, Shin HS, Carbon, 43, 855 (2005)
Katoh M, Aoki H, Kawarda H, Jpn. J. Appl. Phys., 33, 194 (1994)
Zhang YF, Zhang F, Gao QJ, Peng XF, Lin ZD, Dia. Rel. Mater., 10, 1523 (2001)
Baranauskas V, Ceragioli HJ, Peterlevitz AC, Tosin MC, Durrant SF, Thin Sol. Films, 377, 303 (2000)
Lawson SC, Kanda H, Watanabe K, Kiflawi I, Sato Y, Collins AT, J. Appl. Phys., 79, 4348 (1996)
Donnet JB, Paulmier D, Oulanti H, Huu TL, Carbon, 42, 2215 (2004)
Ansari SG, Anh TL, Seo HK, Sung KG, Mushtaq D, Shin HS, J. Cryst. Growth, 265(3-4), 563 (2004)
Dar MA, Ansari SG, Kim YS, Kim GS, Seo HK, Shin J, Kulkarni SK, Shin HS, Thin Solid Films, 497(1-2), 103 (2006)
Robertson J, Mater. Sci. Eng. R, 37, 129 (2002)

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[3] Kamo M, Sato Y, Matsumoto S, Setaka N, J. Cryst. Growth, 62, 642 (1983)

[4] Akaisuka F, Hirose Y, Komaki K, Jpn. J. Appl. Phys., 27, 1600 (1988)

[5] Whitmell DS, Williamson R, Thin Sol. Films, 35, 255 (1976)

[6] Mori T, Namba Y, J. Vac. Sci. Technol. A, 1, 23 (1983)

[7] Buerki PR, Leutwyler S, J. Appl. Phys., 69, 3739 (1991)

[8] Angus JC, Will HA, Stanko WS, J. Appl. Phys., 39, 2915 (1968)

[9] Sung CM, Tai MF, Int. J. Refract. Met. Hard Mater., 15, 237 (1997)

[10] Collins AT, Spear PM, J. Phys. D, 15, 183 (1982)

[11] Mitsuda K, Kojima Y, Yoshida T, Akashi K, J. Mater. Sci., 22, 1557 (1987)

[12] Yugo S, Kanai T, Kimura T, Muto T, Appl. Phy. Lett., 58, 1036 (1991)

[13] Stoner BR, Ma GHM, Wolter SD, Glass JT, Phys. Rev. B, 45, 11067 (1992)

[14] Ong TP, Xiong F, Chang RPH, White CW, J. Mater. Res., 7, 2429 (1992)

[15] Ihra M, Komiyama H, Okubo T, Appl. Phys. Lett., 65, 1192 (1994)

[16] Kobayashi K, Mutsukura N, Machi Y, Mater. Manuf. Processes, 7, 395 (1992)

[17] Feng Z, Komvopopulos K, Brown IG, Bogy DB, J. Appl. Phys., 74, 2841 (1993)

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[20] Yoshiwaka M, Kaneko Y, Yang CF, Tokura H, Kamo M, J. Japan. Soc. Precision Eng., 54, 1703 (1988)

[21] Gicquel A, Silva F, Hassouni K, J. Electrochem. Soc., 147(6), 2218 (2000)

[22] Dar MA, Ansari SG, Seo HK, Kim GS, Kim YS, Kulkarni SK, Shin HS, Carbon, 43, 855 (2005)

[23] Katoh M, Aoki H, Kawarda H, Jpn. J. Appl. Phys., 33, 194 (1994)

[24] Zhang YF, Zhang F, Gao QJ, Peng XF, Lin ZD, Dia. Rel. Mater., 10, 1523 (2001)

[25] Baranauskas V, Ceragioli HJ, Peterlevitz AC, Tosin MC, Durrant SF, Thin Sol. Films, 377, 303 (2000)

[26] Lawson SC, Kanda H, Watanabe K, Kiflawi I, Sato Y, Collins AT, J. Appl. Phys., 79, 4348 (1996)

[27] Donnet JB, Paulmier D, Oulanti H, Huu TL, Carbon, 42, 2215 (2004)

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[29] Dar MA, Ansari SG, Kim YS, Kim GS, Seo HK, Shin J, Kulkarni SK, Shin HS, Thin Solid Films, 497(1-2), 103 (2006)

[30] Robertson J, Mater. Sci. Eng. R, 37, 129 (2002)