화학공학소재연구정보센터
Applied Chemistry for Engineering, Vol.25, No.4, 414-417, August, 2014
LED 공정스크랩으로부터 Ga 회수를 위한 침출 거동 연구
Study on Leaching Behavior for Recovery of Ga Metal from LED Scraps
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초록
습식제련 기술을 통한 Ga의 재활용을 위해 고결정성 GaN으로 구성되어 있는 LED 공정스크랩의 침출 거동을 연구하였다. 고결정성 GaN은 산성 및 염기성 조건에서 매우 안정하여 침출이 어려운 물질로 알려져 있다. 따라서, 본 연구에 서는 볼밀링을 통해 원료와 Na2CO3를 1:1 비율로 섞은 후 관상로를 이용해 1000-1200 ℃에서 열처리 하여 산화물로의 상변화를 유도하였다. 열처리 결과로써, 1100 ℃에서 GaN은 약 73 wt%의 Ga을 포함하는 산화물로 상변화 되었다. 이러한 열처리 샘플은 100 ℃ 4 M HCl에서 96%의 높은 침출률을 나타냈다.
LED scraps consisting of highly crystalline GaN and their leaching behavior are comprehensively investigated for hydro-metallurgical recovery of rare metals. Highly stable GaN renders the leaching of the LED scraps extremely difficult in ordinary acidic and basic media. More favorable state can be obtained by way of high temperature solid-gas reaction of GaN-Na2CO3 powder mixture, ball-milled thoroughly at room temperature and subsequently oxidized under ambient air environment at 1000-1200 ℃ in a horizontal tube furnace, where GaN was effectively oxidized into gallium oxides. Stoichiometry analysis reveals that GaN is completely transformed into gallium oxides with Ga contents of ~73 wt%. Accordingly, the oxidized powder can be suitably leached to ~96% efficiency in a boiling 4 M HCl solution, experimentally confirming the feasibility of Ga recycling system development.
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