Previous Article Next Article Table of Contents Advanced Materials, Vol.26, No.17, 2730-2735, 2014 DOI10.1002/adma.201304054 Export Citation Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices Herpers A, Lenser C, Park C, Offi F, Borgatti F, Panaccione G, Menzel S, Waser R, Dittmann R Keywords:RRAM;PCMO;resistive switching;HAXPES;redox-reaction Please enable JavaScript to view the comments powered by Disqus.
