By combining nanoimprint lithography technique and a two-step lift-off process, a Si nanotube array is fabricated and applied as a light absorber for n-Si/PEDOT:PSS hybrid solar cells. The light is effectively trapped within the nanotubes and the device reveals a J(SC) of 29.9 mA.cm(-2) and a power conversion efficiency of 10.03%, which is an enhancement of 13.4% compared to the cell having the best-known Si architecture of nanocones as a light absorber to date.