This study concerns the use of reactive magnetron sputtering to prepare (TiVCrZrTa)-based oxide and oxynitride films. (TiVCrZrTa)(1-x)O-x and (TiVCrZrTa) 1-x-yNyOx films were prepared, and were found to be amorphous and free of multi-phase structure. Cations and anions in such structures were arranged in a random homogeneous dispersion. The introduction of nitrogen atoms into (TiVCrZrTa)(1-x)O-x yields (TiVCrZrTa)(1-x-y)NyOx, which has a reduced oxidation state and thus, an increased number of the valence electrons. The (TiVCrZrTa)(1-x-y)NyOx film is an n-type semiconductor, with an indirect band gap of 1.95 eV, and a carrier concentration (N) and conductivity (sigma) of 1.01 x 10(19) cm(-3) and 2.75 x 10(-2) (Omega cm)(-1), respectively. (C) 2012 Elsevier B.V. All rights reserved.