A new approach for texturing uniform pyramid structures is proposed with technique using a layer of silicon nitride (Si3N4). This technique eliminates the pre-treatment processes of native oxide etching or acid etching and improves on the conventional texturization process. Si3N4 layers with thicknesses of 14 nm, 40 nm, 50 nm, 73 nm, 82 nm and 102 nm are coated on a monocrystalline silicon wafer, serving as an effective mask in the texturization process. Observation of the influence of the Si3N4 thickness on pyramid morphology and reflectivity shows that good surface coverage (94.7%) with a small uniform pyramid size (similar to 2.6 mu m) on the silicon surface results in improved reflectance properties (12.3%). This simple technique could potentially be used in the texturization processes for commercial optoelectronic devices and sensor applications. (c) 2012 Elsevier B.V. All rights reserved.