In this paper, as a representative of the polyamines, Trilon (R) P was used as a critical additive in copper slurries to improve the copper chemical mechanical polishing (CMP) performance, and high copper removal rate (RR), low copper static etching rate (SER), low dishing and low dielectric erosion were realized by CMP tests on the copper patterned wafers. The chelating reactions between Trilon (R) P and cupric ions are revealed, and it is found that the reaction product Cu-Trilon (R) P complex has dual functions for copper RR and SER: the negative one is from the weak passivation and the lubrication while the positive one is from the complexation with cupric ions and the facilitation of (*OH) formation, and the final polishing result depends on the competition between the above two functions. In addition, the adsorption of Trilon (R) P on the plasma enhanced tetraethylorthosilicate (PETEOS) surface helps form a lubricating thin film, which relieves the severe mechanical stress on the PETEOS pattern, and thus results in low dielectric erosion. (C) 2013 Elsevier B.V. All rights reserved.