Copper and silicon layers were deposited using the accumulative plasma-condensate system. Their surface was found to possess the complex developed morphology using SEM technique. Competing processes of the field selectivity and Gibbs-Thomson effect are considered to describe the formation of the surface. The mathematical model is created on the basis of these effects which describes self-assembly of the surface at the form of adjoining elements of an elliptic section. The comparative analyses of theoretical and experimental results are given. (C) 2014 Elsevier B.V. All rights reserved.