Applied Surface Science, Vol.299, 131-135, 2014
Facile fabrication of porous thin films of Bi2O3/Bi2S3 nanocomposite semiconductors at gas/liquid interface and their photoelectrochemical performances
Propous thin films of Bi2O3/Bi2S3 nanocomposite semiconductors were prepared rapidly at gas/liquid interface for the first time by contacting an acidic Bi(NO3)(3) solution with vapors from ammonia water and ammonium sulfide solution. Hydrolysis of Bi3+ into Bi2O3 nanoparticles (NPs) and their partial sulfurization into Bi2S3 occurred at/near the solution surface upon contacting the vapors of NH3 and H2S, respectively. Based on photoelectrochemical performances, the conditions were optimized for preparation of Bi2O3/Bi2S3 thin films by interfacial reactions and self-assembly of the in situ produced nanocomposites, including concentrations of Bi(NO3)(3) and HNO3, vapor sources, contact manners and contact times. The porous thin film of Bi2O3/Bi2S3 prepared under optimized conditions showed better photoelectrochemical performance than the respective thin films of Bi2O3 and Bi2S3 and their some other composites. (C) 2014 Elsevier B.V. All rights reserved.
Keywords:Porous thin film;Nanocomposite;Bi2O3/Bi2S3;Semiconductor;Gas/liquid interface;Photoelectrochemistry