수소-산소아세틸렌 연소염에 의한 다이아몬드 필름의 증착

고찬규; 김기영; 박동화

Journal of the Korean Industrial and Engineering Chemistry, Vol.8, No.1, 84-91, February, 1997

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수소-산소아세틸렌 연소염에 의한 다이아몬드 필름의 증착

Deposition of Diamond Film by Hydrogen-oxyacetylene Combustion Flame

고찬규, 김기영, 박동화

초록

대기압하에서 수소를 첨가한 연소염장치를 이용하여 몰리브덴 기판 위에 다이아몬드 필름을 증착시켰다. 기판 온도의 증가에 따라 핵생성밀도가 증가하였으며, 1000℃ 이상에서는 흑연화되고 이것이 수소 원자에 의해 에칭되었다. C₂H₂/O₂ 유량비를 증가시킬수록 핵생성밀도는 증가하였지만 결정형태가 구형화되며 비정질카본이 많이 증착되었다 H₂를 첨가하면, 표면 활성도가 향상되어 다이아몬드 핵생성밀도가 증가되었으며, 비정질카본을 에칭시켜 우수한 결정성의 다이아몬드 필름을 얻을 수 있었다. 증착시간을 증가시키면 다이아몬드 필름의 두께가 증가하였다

Diamond film was deposited on Mo substrate at atmospheric pressure using a combustion flame apparatus with the addition of H₂. With the substrate temperature, the nucleation density of the substrate was increased. At temperatures above 1000℃, some of diamond was partly converted into graphite and etched by hydrogen atoms. With an increase of the C₂H₂/O₂ ratio, the nucleation density was increased. But crystals were cauliflower-shaped and a large number of amorphous carbon were deposited. With the addition of H₂, the nucleation density of diamond was increased by the improvement of surface activity. Diamond film of high crystallinity was deposited by etching amorphous carbon. With an increase of deposition time, the thickness of diamond film was increased.

[References]

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[1] Mitsubishi Metal Corp. Japanese Pat. Appl. JP60/201879A2, Oct. 12 (1985)

[2] Fujimori N, Doi A, Japan Patent, 86,251,8 (1986)

[3] Sumitomo Electric Industries, Ltd., Jap. Patent, Appl. JP60/57993, April. 3 (1985)

[4] Meeks E, Kee RJ, Dandy DS, Combust. Flame, 92, 144 (1993)

[5] Hirose Y, 1st Int. Conf. on New Diamond Science and Technology, Tokyo (1988)

[6] Hirose Y, Terasawa Y, Jpn. J. Appl. Phys., 25, L519 (1986)

[7] Oaks DB, Butler JE, Snail KA, Carrington W, Hanssen LM, J. Appl. Phys., 69, 2602 (1991)

[8] Zhu W, Tan BH, Ahn J, Tan HS, J. Mater. Sci., 30(8), 2130 (1995)

[9] Murayama M, Uchida K, Combust. Flame, 91, 239 (1992)

[10] Carrington WA, Hanssen LM, Snail KA, Oakes DB, Butler JE, Metallur. Trans., 20A, 1282 (1989)

[11] Marks CM, Burris HR, Grun J, Snail KA, J. Appl. Phys., 73, 755 (1993)

[12] Matsui Y, Yabe H, Hirose Y, Jpn. J. Appl. Phys., 29, 1552 (1990)

[13] Yu BW, Girshick SL, J. Appl. Phys., 75, 3914 (1994)

[14] Zhimeng G, Sheng Y, Heyi L, J. Mater. Sci. Lett., 14(4), 244 (1995)

[15] Pan LS, Kania DR, "Diamond: Electronic Properties and Applications," 64-66, Kluwer Academic Publishers (1995)