Current Applied Physics, Vol.14, No.5, 772-777, 2014
Tailoring Cu2-xTe quantum-dot-decorated ZnO nanoparticles for potential solar cell applications
Cu2-xTe QDs on ZnO nanoparticles were synthesized using a successive ionic layer absorption and reaction technique (SILAR) at room temperature. The as-synthesized QDs which were distributively deposited on ZnO nanoparticles surface were characterized by field emission scanning electron microscope (FE-SEM), X-ray diffraction and high-resolution transmittance microscope (HR-TEM). It revealed that the average diameter of the QDs was similar to 2 nm. The synthesized Cu2-xTe QDs were solely orthorhombic Cu1.44Te phase. The growth mechanism was supposed that it based on ions deposition. The energy gap of as-synthesized Cu2-xTe QDs was determined similar to 1.1 eV and the smallest energy gap of 0.76 eV was obtained, equal to that of bulk material. Raman spectroscopy and FTIR were also used to study the Cu2-xTe QDs on ZnO nanoparticles. These characteristics suggest a promising implication for a potential broadband sensitizer of QDSCs. (C) 2014 Elsevier B.V. All rights reserved.
Keywords:Copper telluride;Quantum-dot;Successive ionic layer absorption and reaction technique;ZnO nanoparticles