In the present work, the (Bi1-xCex)VO4 (x <= 0.6) ceramics were prepared via a solid-state reaction method and all the ceramic samples could be densified below 900 degrees C. From the X-ray diffraction analysis, it is found that a monoclinic scheelite solid solution can be formed in the range x <= 0.10. In the range 0.20 <= x <= 0.60, a composite region with both monoclinic scheelite and tetragonal zircon solid solutions was formed and the content of the zircon phase increased with the calcined or sintering temperature. The refined lattice parameters of (Bi0.9Ce0.1)VO4 are a = 5.1801(0) angstrom, b = 5.0992(1) angstrom, c = 11.6997(8) angstrom, and gamma = 90.346(0)degrees with the space group I1(1)2/b(15). The VO4 tetrahedron contracts with the substitution of Ce for Bi at the A site, and this helps to keep the specific tetrahedron chain stable in the monoclinic structure. The microwave dielectric permittivity was found to decrease linearly from 68 to about 26.6; meanwhile, the quality factor (Q(f)) value increased from 8000 GHz to around 23900 GHz as the x value increased from 0 to 0.60. The best microwave dielectric properties were obtained in a (Bi0.75Ce0.25)VO4 ceramic with a permittivity of similar to 47.9, a Q(f) value of similar to 18000 GHz, and a near-zero temperature coefficient of similar to+15 ppm/degrees C at a resonant frequency of around 7.6 GHz at room temperature. Infrared spectral analysis supported that the dielectric contribution for this system at microwave region could be attributed to the absorptions of structural phonon oscillations. This work presents a novel method to modify the temperature coefficient of BiVO4-type materials. This system of microwave dielectric ceramic might be an interesting candidate for microwave dielectric resonator and low-temperature cofired ceramic technology applications.