Inorganic Chemistry, Vol.53, No.8, 4161-4168, 2014
Photoluminescence Properties of Eu3+-Doped Glaserite-Type Orthovanadates CsK2Gd[VO4](2)
Undoped and Eu3+-doped glaserite-type orthovanadates CsK2Gd1-xEux[VO4](2) with various Eu3+ concentrations of x = 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, and 1.0 were synthesized via the solid-state reaction. The formation of a single phase compound was verified through the X-ray diffraction studies. The photoluminescence (PL) and PL excitation (PLE) spectra, PL decay curves, and absolute quantum efficiency (QE) were investigated. Unlike the conventional Eu3+-doped vanadates, these Eu3+-doped samples showed not only several sharp emission lines due to Eu3+ but also a broad emission band with a maximum at 530 nm due to the [VO4](3-) host. The intensities of the host and Eu3+ emissions increased when the Eu3+ concentration was increased from x = 0 to x = 0.6 and decreased above x = 0.6. Similar concentration dependence was observed for QE. The host emission, even if in the Eu3+-condensed host of CsK2Eu(VO4)(2) was never quenched indicating inefficient energy transfer from the host [VO4](3-) to Eu3+. This inefficient energy transfer is understood by suppression of the energy transfer by the V-O-Eu bond angle deviated from 180 and the separation of Eu3+ ions at the Gd3+ site from [VO4](3-). Like the 530 nm charge transfer [VO4](3-) emission, two broad and intense PLE bands with maxima at 330 and 312 nm were observed for the Eu3+ emission. A maximum QE of 38.5% was obtained from CsK2Gd1-xEux[VO4](2) (x = 0.6). A white-colored emission was obtained by the combination of the broad 530 nm emission band and the intense sharp lines due to Eu3+ at 590-620 nm.