Based on the melt-quenching method, V2O5 was doped with Nd3+ ions. Photoluminescent properties due to electronic transitions of Nd3+ were found. In spite of the used method in the fabrication of this material, which consisted in a thermal shock from 1073 to 100 K, all the characterization techniques indicated that V2O5 has a crystalline orthorhombic phase and is acting as a host matrix for the Nd3+ ions. For instance, in the X-ray diffraction patterns, only well-defined peaks associated to V2O5 were detected. By Raman spectroscopy, vibrational modes related to V2O5 were observed. An E (g) = 2.15 eV was determined from the optical absorption spectrum for this doped material. Scanning electron microscopy images recorded on a fresh fracture show that this material is formed by lamellar plates. The elemental semi quantitative analysis indicates that the doping level with Nd3+ was of the order of 2.0 +/- A 0.2 at.%. Dark conductivity measurements yielded values in the 10(-6)-10(-12) (Omega cm)(-1) range. Finally, by micro photoluminescence spectroscopy, the {F-4(5/2), F-4(3/2)} -> I-4(9/2) electronic transitions related to Nd3+ ions were observed.