The ZnO microwires were synthesized repetitively via chemical vapor deposition method. The high brightness light emitting diode based on the single ZnO microwire/p-GaN heterojunction was realized. A strong ultraviolet emission accompanied by a relatively weak defects-related emission was observed at room temperature photoluminescence spectra of single ZnO microwire. The I-V curve of the heterojunction diode showed obvious rectifying characteristics with a turn-on voltage of about 7 V. Under the forward injection current of 1.1 mA, the ultraviolet electroluminescence centered at 389 nm wavelength could be obtained based on the single ZnO microwire/p-GaN heterojunction diode. (C) 2013 Elsevier B.V. All rights reserved.