In order to clarify the effects of the nonadiabaticity on the inelastic scattering between molecule and solid, we numerically investigate the dynamical processes in which the electron-hole (e-h) pairs are created at semiconductor surfaces by the charge transfer (CT) between the molecule and solid. Using the Fano-Anderson model that is extended to the multi-electron systems together with the real time Trotter’s formula, we take into account the effects of the quantum mechanical back reaction from the electronic transition to the motion of molecule, and the effects of the nonadiabaticity and the irreversibility for the CT processes. We also clarify the nature of the energy transfer from the motion of molecule to the e-h pairs as a function of the four parameters; the band gap energy in solid, the incident energy of the molecule, the resonant transfer energy between solid and molecule, and the electron-electron repulsive energy in the molecule. It is concluded that the energy transfer to the e-h pairs increases as increasing the lifetime of the intermediate states wherein the charge is separated between solid and molecule by the CT. Thus, the effects of the above four parameters on the energy transfer are clarified based on the lifetime of the CT intermediate states.