Self-assembled layers of 4,4'-thio-bis-benzene-thiolate spontaneously adsorbed on p-doped GaAs(1 1 1)A and GaAs(1 1 1)B electrodes were examined by EIS, XPS, and AFM investigations. XPS data provide evidence that (i) both As and Ga atoms are involved in the thiolate formation no matter which one is prevailing on the semiconducting surface and (ii) only one of the two thiol groups participates in the chemisorption bond. EIS and AFM results point to a more stable thiolate layer formed on the As-terminated surface than that formed on the Ga-terminated surface due to stronger self-assembling effects developed between the adsorbed species. (C) 2013 Elsevier Ltd. All rights reserved.