We report the use of chemically deposited bismuth sulfide (Bi2S3) for sensitization of TiO2 nanotube arrays (TNA) obtained by electrochemical anodization. Deposition of Bi2S3 onto TNA was carried at 25 degrees C for 20 min, 1 h and 3 h, showing structural changes and different Bi/S ratio at shorter deposition time. The best photocurrent and external quantum efficiency was obtained at 1 h. Electrochemical impedance measurements were correlated with the structural, optical, and electronic properties of the sensitized arrays, finding a decisive role of the recombination resistance and chemical capacitance in determining the photoelectrochemical behavior. A three-order of magnitude difference in electron life time (tau(n)) was found in sensitized arrays with different Bi/S ratio, suggestive of the separation of the limiting phenomena inside the oxide (tau(n) = ms) and chalcogenide (tau(n) = s) films. (C) 2013 Elsevier Ltd. All rights reserved.