The charge carrier dynamics in the novel CdSe nanocluster films fabricated by a chemical deposition method was studied by the femtosecond pump-probe measurements. The intensity dependent signals can be well described by a rate equation model. The overall kinetic process is listed as follows : a rapid electron trapping (<1 ps), the Auger recombination, the recombination of electrons in the surface states (similar to 46 ps) and the long-lived trapped electron-hole recombination. When the cluster radius is as large as 27 nm, an induced transient absorption can be observed. We attribute the induced transient absorption to the formation of the biexcitons or the trapped-carrier-induced Stark effect.