In the present research work spray pyrolysis technique (SPT) is employed to synthesize GDC (10%Gd doped ceria) thin films on anode-grade-ceramic substrate (porous NiO-GDC). The film/substrate structure was characterized for their micro-structural and electrical properties along with their interfacial-quality. By optimization of preparative parameters of SPT and modification of surface of anode-grade ceramic substrate, we were able to prepare the GDC films having thickness of the order of 13 mu m on NiO-GDC substrate. Further to improve the interfacial quality and densification of film, annealing of structure at 1000 degrees C for 8 h was carried out which leads to fully dense (>96%) GDC films, forming a gas-tight interface with substrate. Impedance measurements revealed that grain interior conductivity for GDC/NiO-GDC half-cell was of the order of 0.1S/cm at 500 degrees C which is the desired conductivity for successful operation of IT-SOFC. The activation energy for grain interior and grain-boundary conduction estimated for GDC/NiO-GDC was 1.07 eV and 0.93 eV, respectively. Copyright (C) 2010, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.