In the present work, a recrystallization process of sintered silicon wafers was studied to produce photovoltaic solar cells. The recrystallization step is carried out by Zone Melting Recrystallization (ZMR) or Full Wafer Recrystallization (FWR). Structural analysis and impurity content of the processed material are presented. Electrical characterization shows that mobility reaches values of 150 and 250 cm(2) V-1 s(-1) in samples recrystallized by FWR and ZMR with P-type doping of 5 x 10(16) and 3 x 10(17) at/cm(3). The lifetime reaches values around 1 mu s. After solar cell fabrication, a conversion efficiency of 8.9% is obtained by using a simplified process without texturing. (C) 2012 Elsevier B.V. All rights reserved.