The recrystallization processes of supercooled Si and Ge melts were investigated using molecular-dynamics (MD) simulations. The incubation time T-i defined as the cooling time period to obtain 10% recrystallization of supercooled melts is found to be minimum when temperature is around 0.7T(m) (T-m: melting temperature for both of crystal Si and Ge). The MD results suggest that 0.7T(m) is an optimum annealing temperature to enhance the nucleation rate in the growth processes of Si and Ge films. (C) 2011 Elsevier B.V. All rights reserved.