Novel Hg3In2Te6 (MIT) single crystals with 30 mm in diameter and 110 mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffractometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150-317 arc sec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79 x 10(3) Omega cm, 1.01 x 10(13) cm(-3) and 3.44 x 10(2) cm(2) V-1 s(-1), respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2-6) x 10(4) cm(-2) in the whole ingot. (C) 2011 Elsevier B.V. All rights reserved.